US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Treatment of electrodes of MIM capacitors" (Taiwanese Inventors)

Posted On: 2026-07-15

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,632, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Treatment of electrodes of MIM capa... Read More

US Patent Issued to DENSO on June 23 for "Signal transmission device" (Japanese Inventors)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,633, issued on June 23, was assigned to DENSO Corp. (Kariya-city, Japan). "Signal transmission device" was invented by Shuji Asano (Kariya-... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device including supporter" (South Korean Inventor)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,634, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device including supporter"... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Semiconductor contact structures and methods" (Taiwanese Inventors)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,636, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor contact structures an... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Method of forming a contact plug using an hourglass-shaped opening to prevent a bowing profile" (Taiwanese Inventors)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,637, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Method of forming a contact plug us... Read More

US Patent Issued to Marvell Asia on June 23 for "Gate all-around (GAA) field effect transistors (FETS) having vertical source and drain" (California Inventor)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,638, issued on June 23, was assigned to Marvell Asia Pte Ltd (Singapore). "Gate all-around (GAA) field effect transistors (FETS) having ver... Read More

US Patent Issued to Avago Technologies International Sales on June 23 for "Gate all-around laterally diffused metal-oxide semiconductor field effect transistor" (California Inventor)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,639, issued on June 23, was assigned to Avago Technologies International Sales Pte. Ltd. (Singapore). "Gate all-around laterally diffused m... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Low-frequency nosie transistors with curved channels" (Taiwanese Inventors)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,640, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Low-frequency nosie transistors wit... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Semiconductor device and method of fabricating the same" (Taiwanese Inventors)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,641, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and method of ... Read More

US Patent Issued to Wolfspeed on June 23 for "Multiple silicide process for separately forming n-type and p-type ohmic contacts and related devices" (North Carolina Inventors)

Posted On: 2026-07-15

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ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,642, issued on June 23, was assigned to Wolfspeed Inc. (Durham, N.C.). "Multiple silicide process for separately forming n-type and p-type ... Read More

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US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Treatment of electrodes of MIM capacitors" (Taiwanese Inventors)

US Patent Issued to DENSO on June 23 for "Signal transmission device" (Japanese Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device including supporter" (South Korean Inventor)

US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Semiconductor contact structures and methods" (Taiwanese Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Method of forming a contact plug using an hourglass-shaped opening to prevent a bowing profile" (Taiwanese Inventors)

US Patent Issued to Marvell Asia on June 23 for "Gate all-around (GAA) field effect transistors (FETS) having vertical source and drain" (California Inventor)

US Patent Issued to Avago Technologies International Sales on June 23 for "Gate all-around laterally diffused metal-oxide semiconductor field effect transistor" (California Inventor)

US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Low-frequency nosie transistors with curved channels" (Taiwanese Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Semiconductor device and method of fabricating the same" (Taiwanese Inventors)

US Patent Issued to Wolfspeed on June 23 for "Multiple silicide process for separately forming n-type and p-type ohmic contacts and related devices" (North Carolina Inventors)